[转帖]張航之四兒---Kuan-Chang Chang(張冠張)個人學術檔案 作者：張航 时间：2016-2-05 周五, 下午7:19 [转帖]張航之四兒---Kuan-Chang Chang(張冠張)個人學術檔案 Kuan-Chang Chang(張冠張) Department of Materials and Optoelectronic Science, National Sun Yat-Sen University Resistance Random Access Memory(RRAM), Device Physics, Supercritical Fluid 在 student.nsysu.edu.tw 的電子郵件地址已通過驗證 學術搜尋 建立我自己的個人學術檔案 Google 學術搜尋 建立我自己的個人學術檔案 引文指數 全部 自 2010 年 引文 821 803 H 指數 18 18 i10 指數 27 26 201020112012201320142015 132348235311168 共同作者查看所有共同作者… • Yao-Feng Chang 標題1–91 引用次數 年份 Redox Reaction Switching Mechanism in RRAM Device With Structure YE Syu, TC Chang, TM Tsai, YC Hung, KC Chang, MJ Tsai, MJ Kao, ... Electron Device Letters, IEEE 32 (4), 545-547 77 2011 A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid MC Chen, TC Chang, SY Huang, KC Chang, HW Li, SC Chen, J Lu, Y Shi Applied Physics Letters 94 (16) 52 2009 Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment KC Chang, TM Tsai, TC Chang, YE Syu, CC Wang, SL Chuang, CH Li, ... Applied Physics Letters 99 (26), 263501 39 2011 The effect of silicon oxide based RRAM with tin doping KC Chang, TM Tsai, TC Chang, YE Syu, SL Chuang, CH Li, DS Gan, ... Electrochemical and Solid-State Letters 15 (3), H65-H68 33 2011 Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices KC Chang, R Zhang, TC Chang, TM Tsai, JC Lou, JH Chen, TF Young, ... Electron Device Letters, IEEE 34 (5), 677-679 31 2013 Bipolar resistive RAM characteristics induced by nickel incorporated into silicon oxide dielectrics for IC applications TM Tsai, KC Chang, TC Chang, YE Syu, SL Chuang, GW Chang, GR Liu, ... Electron Device Letters, IEEE 33 (12), 1696-1698 29 2012 miR-29 targets Akt3 to reduce proliferation and facilitate differentiation of myoblasts in skeletal muscle development W Wei, HB He, WY Zhang, HX Zhang, JB Bai, HZ Liu, JH Cao, KC Chang, ... Cell death & disease 4 (6), e668 28 2013 Atomic-level quantized reaction of HfOx memristor YE Syu, TC Chang, JH Lou, TM Tsai, KC Chang, MJ Tsai, YL Wang, M Liu, ... Applied Physics Letters 102 (17), 172903 28 2013 A comparative study of the bactericidal effect of photocatalytic oxidation by TiO2 on antibiotic‐resistant and antibiotic‐sensitive bacteria TM Tsai, HH Chang, KC Chang, YL Liu, CC Tseng Journal of chemical technology and biotechnology 85 (12), 1642-1653 28 2010 Characteristics and mechanisms of silicon-oxide-based resistance random access memory KC Chang, TM Tsai, TC Chang, HH Wu, JH Chen, YE Syu, GW Chang, ... Electron Device Letters, IEEE 34 (3), 399-401 26 2013 Silicon introduced effect on resistive switching characteristics of WOX thin films YE Syu, TC Chang, TM Tsai, GW Chang, KC Chang, YH Tai, MJ Tsai, ... Applied Physics Letters 100 (2), 022904 26 2012 Senior Member IEEE KC Chang, TM Tsai, TC Chang Wu HH, Chen KH, Chen JH, Young TF, Chu TJ, Chen JY, Pan CH, Su YT, Syu YE ... 25 2013 Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical Fluid Treatment TM Tsai, KC Chang, TC Chang, GW Chang, YE Syu, YT Su, GR Liu, ... Electron Device Letters, IEEE 33 (12), 1693-1695 25 2012 Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment TM Tsai, KC Chang, TC Chang, YE Syu, KH Liao, BH Tseng, SM Sze Applied Physics Letters 101 (11), 112906 25 2012 Electrical conduction mechanism of Zn: SiOx resistance random access memory with supercritical CO2 fluid process KC Chang, TM Tsai, R Zhang, TC Chang, KH Chen, JH Chen, TF Young, ... Applied Physics Letters 103 ( 
图片说明: Cool , 083509 22 2013 Asymmetric Carrier Conduction Mechanism by Tip Electric Field in Resistance Switching Device YE Syu, TC Chang, TM Tsai, GW Chang, KC Chang, JH Lou, YH Tai, ... Electron Device Letters, IEEE 33 (3), 342-344 21 2012 Performance and characteristics of double layer porous silicon oxide resistance random access memory TM Tsai, KC Chang, R Zhang, TC Chang, JC Lou, JH Chen, TF Young, ... Applied Physics Letters 102 (25), 253509 19 2013 Charge quantity influence on resistance switching characteristic during forming process TJ Chu, TC Chang, TM Tsai, HH Wu, JH Chen, KC Chang, TF Young, ... Electron Device Letters, IEEE 34 (4), 502-504 19 2013 Low Temperature Improvement Method on Resistive Random Access Memory Devices KC Chang, TM Tsai, TC Chang, HH Wu, KH Chen, JH Chen, TF Young, ... Electron Device Letters, IEEE 34 (4), 511-513 17 2013 Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO 2 fluid treatment KC Chang, CH Pan, TC Chang, TM Tsai, R Zhang, JC Lou, TF Young, ... Electron Device Letters, IEEE 34 (5), 617-619 16 2013 Characteristics of hafnium oxide resistance random access memory with different setting compliance current YT Su, KC Chang, TC Chang, TM Tsai, R Zhang, JC Lou, JH Chen, ... Applied Physics Letters 103 (16), 163502 15 2013 Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress GW Chang, TC Chang, JC Jhu, TM Tsai, YE Syu, KC Chang, YH Tai, ... Applied Physics Letters 100 (1 , 182103 15 2012 Low-temperature synthesis of ZnO nanotubes by supercritical CO2 fluid treatment KC Chang, TM Tsai, TC Chang, YE Syu, HC Huang, YC Hung, TF Young, ... Electrochemical and Solid-State Letters 14 (9), K47-K50 13 2011 Endurance Improvement Technology With Nitrogen Implanted in the Interface of Resistance Switching Device YE Syu, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ... Electron Device Letters, IEEE 34 (7), 864-866 11 2013 Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors KH Liu, TC Chang, KC Chang, TM Tsai, TY Hsieh, MC Chen, BL Yeh, ... Applied Physics Letters 104 (10), 103501 10 2014 Improving resistance switching characteristics with SiGeOx/SiGeON double layer for nonvolatile memory applications YE Syu, TC Chang, CT Tsai, GW Chang, TM Tsai, KC Chang, YH Tai, ... Electrochemical and Solid-State Letters 14 (10), H419-H421 10 2011 Safety and outcomes of short-term multiple femoral venous sheath placement in cardiac electrophysiological study and radiofrequency catheter ablation JY Chen, KC Chang, YC Lin, HT Chou, JS Hung Japanese heart journal 45 (2), 257-264 10 2004 Tri-resistive switching behavior of hydrogen induced resistance random access memory TJ Chu, TM Tsai, TC Chang, KC Chang, R Zhang, KH Chen, JH Chen, ... Electron Device Letters, IEEE 35 (2), 217-219 9 2014 Improvement mechanism of resistance random access memory with supercritical CO 2 fluid treatment KC Chang, JH Chen, TM Tsai, TC Chang, SY Huang, R Zhang, KH Chen, ... The Journal of Supercritical Fluids 85, 183-189 9 2014 Dual ion effect of the lithium silicate resistance random access memory KC Chang, TM Tsai, TC Chang, KH Chen, R Zhang, ZY Wang, JH Chen, ... Electron Device Letters, IEEE 35 (5), 530-532 8 2014 Integrated One Diode–One Resistor Architecture in Nanopillar SiO x Resistive Switching Memory by Nanosphere Lithography L Ji, YF Chang, B Fowler, YC Chen, TM Tsai, KC Chang, MC Chen, ... Nano letters 14 (2), 813-818 8 2013 High performance of graphene oxide-doped silicon oxide-based resistance random access memory R Zhang, KC Chang, TC Chang, TM Tsai, KH Chen, JC Lou, JH Chen, ... Nanoscale research letters 8 (1), 1-6 8 2013 Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors GW Chang, TC Chang, YE Syu, TM Tsai, KC Chang, CH Tu, FY Jian, ... Thin Solid Films 520 (5), 1608-1611 8 2011 Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment MC Chen, TC Chang, SY Huang, KC Chang, HC Huang, SC Chen, J Lu, ... Surface and Coatings Technology 204 (6), 1112-1115 8 2009 Mechanism of power consumption inhibitive multi-layer Zn: SiO2/SiO2 structure resistance random access memory R Zhang, TM Tsai, TC Chang, KC Chang, KH Chen, JC Lou, TF Young, ... Journal of Applied Physics 114 (23), 234501 7 2013 The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory JW Huang, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ... Applied Physics Letters 102 (20), 203507 7 2013 Characterization of oxygen accumulation in indium-tin-oxide for resistance random access memory R Zhang, KC Chang, TC Chang, TM Tsai, SY Huang, WJ Chen, KH Chen, ... Electron Device Letters, IEEE 35 (6), 630-632 6 2014 Space electric field concentrated effect for Zr: SiO2 RRAM devices using porous SiO2 buffer layer KC Chang, J Huang, TC Chang, TM Tsai, KH Chen, TF Young, JH Chen, ... Nanoscale research letters 8 (1), 1-5 6 2013 The resistive switching characteristics in TaON films for nonvolatile memory applications MC Chen, TC Chang, YC Chiu, SC Chen, SY Huang, KC Chang, TM Tsai, ... Thin Solid Films 528, 224-228 6 2013 Distally based anteromedial thigh fasciocutaneous island flap for patellar soft tissue reconstruction LS Chou, KC Chang, TW Lin, HC Chou Journal of Trauma and Acute Care Surgery 66 (4), 1146-1151 6 2009 Hydrogen induced redox mechanism in amorphous carbon resistive random access memory YJ Chen, HL Chen, TF Young, TC Chang, TM Tsai, KC Chang, R Zhang, ... Nanoscale research letters 9 (1), 1-5 5 2014 Resistive switching modification by ultraviolet illumination in transparent electrode resistive random access memory CC Shih, KC Chang, TC Chang, TM Tsai, R Zhang, JH Chen, KH Chen, ... Electron Device Letters, IEEE 35 (6), 633-635 5 2014 Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon C Ye, C Zhan, TM Tsai, KC Chang, MC Chen, TC Chang, T Deng, ... Applied Physics Express 7 (3), 034101 5 2014 Resistance switching induced by hydrogen and oxygen in diamond-like carbon memristor YJ Chen, KC Chang, TC Chang, HL Chen, TF Young, TM Tsai, R Zhang, ... Electron Device Letters, IEEE 35 (10), 1016-1018 4 2014 Mechanical stress influence on electronic transport in low-k SiOC dielectric single damascene capacitor YL Yang, TF Young, TC Chang, FY Shen, JH Hsu, TM Tsai, KC Chang, ... Applied Physics Letters 102 (19), 192912 4 2013 Hopping conduction distance dependent activation energy characteristics of Zn: SiO2 resistance random access memory devices KH Chen, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ... Applied Physics Letters 102 (13), 133503 4 2013 Conjugated polymer mediated synthesis of nanoparticle clusters and core/shell nanoparticles P Xu, K Chang, YI Park, B Zhang, L Kang, Y Du, RS Iyer, HL Wang Polymer 54 (2), 485-489 4 2013 Abnormal subthreshold leakage current at high temperature in InGaZnO thin-film transistors GW Chang, TC Chang, JC Jhu, TM Tsai, YE Syu, KC Chang, YH Tai, ... Electron Device Letters, IEEE 33 (4), 540-542 4 2012 Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor H Chen, TC Chang, TF Young, TM Tsai, KC Chang, R Zhang, SY Huang, ... Applied Physics Letters 104 (24), 243508 3 2014 Analysis of the Reasons of the Hydraulic Impact and the Measures of Decrease and Elimination [J] SQ Hou, JS Cheng, LL Zhang Coal Mine Machinery 5, 071 3 2005 Temperature-dependent instability of bias stress in InGaZnO thin-film transistors GW Chang, TC Chang, JC Jhu, TM Tsai, KC Chang, YE Syu, YH Tai, ... Electron Devices, IEEE Transactions on 61 (6), 2119-2124 2 2014 Mechanical Stress Influence on Electronic Transport in Low-SiOC Dielectric Dual Damascene Capacitor YL Yang, TF Young, TC Chang, JH Hsu, TM Tsai, FY Jian, KC Chang Electron Device Letters, IEEE 34 ( , 1056-1058 2 2013 Secondary development on three-dimensional modeling of AutoCAD [J] L CAO, X XIAO, J CHENG, D LIU Coal Mine Machinery 12, 045 2 2004 Physical and chemical mechanisms in oxide-based resistance random access memory KC Chang, TC Chang, TM Tsai, R Zhang, YC Hung, YE Syu, YF Chang, ... Nanoscale research letters 10 (1), 1-27 1 2015 Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory TJ Chu, TM Tsai, TC Chang, KC Chang, CH Pan, KH Chen, JH Chen, ... Applied Physics Letters 105 (22), 223514 1 2014 Controllable Set Voltage in Bilayer ZnO: SiO 2/ZnO x Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation X Huang, KC Chang, TC Chang, TM Tsai, CC Shih, R Zhang, SY Huang, ... Electron Device Letters, IEEE 35 (12), 1227-1229 1 2014 N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors JC Jhu, TC Chang, GW Chang, YE Syu, TM Tsai, FY Jian, KC Chang, ... ECS Transactions 45 (7), 169-178 1 2012 Genetic polymorphisms and haplotype structures of HSPA5 gene in the Han population of Southern China X Zhu, J Cheng, J Zhao, L Chen, S Hou, G Zhao, F Lan, W Wang, H Kung, ... Tissue antigens 74 (5), 420-423 1 2009 Relation Between Walking Hydraulic Motor's Displacement and Turning Angle [J] CY Li, DB Liu, JS Cheng Coal Mine Machinery 4, 023 1 2006 Application of Hydraulic Drive and Control in Walking System of Coal Vehicle [J] DB Liu, CY Li, LM Cao, JS Cheng Coal Mine Machinery 1, 070 1 2006 Designment of Three Working Position Switch Operating Machine DM Li, GX Su, M Chen, JS Cheng Meikuang Jixie(Coal Mine Machinery), 33-34 1 2005 Improvement of Resistive Switching Characteristic in Silicon Oxide Based RRAM through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid KC Chang, TM Tsai, TC Chang, R Zhang, KH Chen, JH Chen, MC Chen, ... IEEE 2015 Mechanism of triple ions effect in GeSO resistance random access memory W Zhang, Y Hu, TC Chang, TM Tsai, KC Chang, HL Chen, YT Su, ... IEEE 2015 Effects of Varied Negative Stop Voltages on Current Self-compliance in Indium Tin Oxide Resistance Random Access Memory C Lin, KC Chang, TC Chang, TM Tsai, JH Pan, R Zhang, KH Liu, ... IEEE 2015 Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory YT Tseng, TM Tsai, TC Chang, CC Shih, KC Chang, R Zhang, KH Chen, ... Applied Physics Letters 106 (21), 213505 2015 The Manipulation of Temperature Coefficient Resistance of TaN Thin-Film Resistor by Supercritical CO 2 Fluid HR Chen, YC Chen, TC Chang, KC Chang, TM Tsai, TJ Chu, CC Shih, ... Electron Device Letters, IEEE 36 (3), 271-273 2015 Hopping conduction properties of the Sn: SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure KH Chen, KC Chang, TC Chang, TM Tsai, KH Liao, YE Syu, SM Sze Applied Physics A 119 (4), 1609-1613 2015 High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protect ive compliance current structure KC Chang, R Zhang, TC Chang, TM Tsai, TJ Chu, HL Chen, CC Shih, ... Electron Devices Meeting (IEDM), 2014 IEEE International, 33.3. 1-33.3. 4 2014 Separate Clock Network Voltage for Correcting Random Errors in ULV Clocked Storage Cells SC Luo, KC Chang, MP Chen, CJ Huang, YF Chiu, PH Chen, LC Cheng, ... Circuits and Systems II: Express Briefs, IEEE Transactions on 61 (12), 947-951 2014 High-performance HfO2/ZrO2/IGZO thin-film transistors deposited using atmospheric pressure plasma jet CH Wu, KM Chang, HY Hsu Electronics Letters 50 (23), 1747-1749 2014 Study on Supercritical Fluids and Resistance Random Access Memory KC Chang 2014 Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography L Ji, YF Chang, B Fowler, YC Chen, TM Tsai, KC Chang, MC Chen, ... Device Research Conference (DRC), 2014 72nd Annual, 243-244 2014 High-density nano-pillar SiO x-based resistive switching memory using nano-sphere lithography to fabricate a one diode-one resistor (1D-1R) architecture YF Chang, L Ji, YC Chen, F Zhou, TM Tsai, KC Chang, MC Chen, ... VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of ... 2014 Surface scattering mechanisms of tantalum nitride thin film resistor HR Chen, YC Chen, TC Chang, KC Chang, TM Tsai, TJ Chu, CC Shih, ... Nanoscale research letters 9 (1), 1-5 2014 Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices MC Chen, TC Chang, YC Chiu, SC Chen, SY Huang, YE Syu, KC Chang, ... ECS Transactions 53 (29), 1-7 2013 N 2 O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors GW Chang, TC Chang, JC Jhu, TM Tsai, YE Syu, KC Chang, FY Jian, ... Surface and Coatings Technology 231, 281-284 2013 [Recent progress in the genotyping studies of Mycobacterium tuberculosis]. Y Liu, J Cheng, CY Li Zhonghua jie he he hu xi za zhi= Zhonghua jiehe he huxi zazhi= Chinese ... 2013 N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors JC Jhu, TC Chang, GW Chang, TM Tsai, YE Syu, FY Jian, KC Chang, ... ECS Transactions 45 (31), 47-55 2013 Improvement of Resistance Switching Behavior by Localizing Filament with Si Injection WOX Switching Layer SY Huang, TC Chang, YE Syu, YC Hung, KC Chang, MC Chen, TM Tsai, ... Meeting Abstracts, 77-77 2013 Self-Rectification Resistance Switching Memory Device with Bipolar Operation Mode GW Chang, TC Chang, YE Syu, KC Chang, TM Tsai, YH Tai Meeting Abstracts, 777-777 2013 Electric Characteristic Study and Characteristic Analysis for Flexible Photoelectric Thin Films and Devices GW Chang, TC Chang, KC Chang, TM Tsai, YE Syu, YH Tai, MC Wang, ... Meeting Abstracts, 612-612 2013 Temperature Dependent Instability of Drain Bias Stress in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors GW Chang, TC Chang, YE Syu, JC Jhu, KC Chang, TM Tsai, YH Tai Meeting Abstracts, 928-928 2013 Hematopathologic Discrepancy between Submitted and Review Diagnoses KC Chang, C Chang, SW Huang, D Jones LABORATORY INVESTIGATION 93, 323A-323A 2013 Resistive random access memory, controlling method and manufacturing method therefor TC Chang, C Min-Chen, YE Syu, K Chang, FY Jian US Patent App. 13/690,250 2012 Nanostructured Materials, Carbon Nanotubes, and Fullerenes-Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment KC Chang, TM Tsai, TC Chang, YE Syu, HC Huang, YC Hung, TF Young, ... IEEE-ECS Electrochemical and Solid State Letters 14 (9), K47 2011 Growth of ZnO Nanotubes by CO2 Supercritical Fluid Treatment at Low-Temperature K Chang 2009 Experimental study on target treatments of nasopharyngeal carcinoma using^ 1^ 8^ 8Re-BAC~ 5 combined with PYM-BAC~ 5 J Cheng, Z Liang, X Xiao CHINESE JOURNAL OF NUCLEAR MEDICINE 28 (1), 31 2008 Available online at www. sciencedirect. com S Akaho, Y Nishimori, S Amari, S Fiori, N Arana-Daniel, ... Neurocomputing 67, 465-467 2005 Immediate Postcraniotomy Status Epilepticus in Renal Failure Patients with Subdural Hemorrhage-Report of Two Cases KN Liu, JS Huang, KC Chang JOURNAL-SURGICAL ASSOCIATION REPUBLIC OF CHINA 30, 215-218 1997 PREPARATION OF SUPER-HYDROPHOBIC FILM BY FLUORINE-POLYMER KC Chang, H Chen, CK Huang, SI Huang 氧化矽基電阻式記憶體 TC Chang, TM Tsai, KC Chang, TJ Chu, YE Syn 返回學術檔案 Kuan-Chang Chang(張冠張)的共同作者 Kuan-Chang Chang(張冠張) Yao-Feng Chang The University of Texas at Austin 在 utexas.edu 的電子郵件地址已通過驗證 被引用 256 次 SiOx-Based Resistive Switching Memory. 日期及引用次數是由電腦程式自動估算而得。 本文網址 http://blog.xuite.net/changhangming1234/twblog/380237756 来源：http://www.australianwinner.com/AuWinner/viewtopic.php?t=669585 |