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張航之長子張鼎張教授之半導體奈米元件及薄膜電晶體平面顯示器實 作者：張航 时间：2015-1-12 周一, 下午6:53 張航之長子張鼎張教授之半導體奈米元件及薄膜電晶體平面顯示器實驗室網址 http://blog.xuite.net/changhangming1234/twblog/301053960 半導體奈米元件及薄膜電晶體平面顯示器實驗室 Semiconductor nano Device & TFT-LCD Lab 實驗室簡介Introduction http://140.117.32.135/laboratory/index.php?id=9 指導教授 professor http://140.117.32.135/laboratory/prof.php?id=9 中文名稱: 張鼎張 特聘教授 英文名稱: Ting-Chang Chang 實驗室名稱: 半導體奈米元件及薄膜電晶體平面顯示器實驗室 實驗室位置:物理館D7009、D7010 辦公室位置:物理館D2004 到職年月：1999/02 E-mail: tcchang3708@gmail.com 辦公室電話: 07-5252000-3708 實驗室電話: 07-5252000-3708 學 歷 國立交通大學電子所博士(1989-1994) 國立台灣大學物理所碩士(1987-1989) 國立台灣師範大學學士(1982-1986) 經 歷 2013年 榮獲 中山大學 『產學傑出獎』 2012年榮獲 經濟部 『奈米產業科技菁英獎』 國立中山大學物理系特聘教授 國家奈米元件實驗室 研究員及組長 曾獲得 徐有庠基金會『第三屆有庠科技講座』 曾獲得 教育部『產學合作獎』 曾獲得 中山大學『中山發明獎』 曾獲得 2次 中山大學『中山大學研究績優獎』 曾獲得 『產學研究類特聘教授』 曾獲得 『學術研究類特聘教授』 專 長 奈米元件技術、半導體元件物理、薄膜電晶體平面顯示器 研究方向及重點 半導體奈米元件與奈米技術 Semiconductor Nano-device and Nano-Technology 積體電路製程 ULSI Technology 薄膜電晶體(TFT)平面顯示器 TFT-LCD Display 半導體元件物理 Semiconductor Device Physics 研究計畫 Research programs 2004 先進奈米點非揮發性記憶體元件製作與物理機制探討之研究(1/3) 2004 高屏地區奈米核心設施建造(1/3) 2004 友達光電公司-前瞻顯示器技術開發研究 2004 基層表面接觸角與分子團變化之相關性研究 2004 複晶矽薄膜電晶體(TFT)的元件量技術與物理模型分析 2005 先進奈米點非揮發性記憶體元件製作與物理機制探討之研究(2/3) 2005 財團法人工業技術研究院-基板薄膜表面介面層特性優化技術之研究 2005 奈米結構儲存單元之記憶製作與物理機制研究(1/3) 2005 SONOS非揮發性記憶體電性物理機探討之研究 2005 中華民國台灣薄膜電晶體液晶顯示器產業協會-Hibird薄膜電晶體的製程與電性研究 2006 先進奈米點非揮發性記憶體元件製作與物理機制探討之研究(3/3) 2006 奈米結構儲存單元之記憶製作與物理機制研究(2/3) 2006 奇美電子公司-LTPS元件信賴度研究 2006 中華民國台灣薄膜電晶體液晶顯示器產業協會-印刷材料合成與製程研究(二) 2006 財團法人工業技術研究院-新式多孔性奈米元件製備與特性之研究 2007 奈米點光電元件之製作與物理機制研究 2007 複晶矽薄膜電晶體於交直流操作下之元件特性與可靠度量測 2007 受本質應力及外界應力下金氧半場效電晶體之可靠度研究與電性分析 2007 奈米結構儲存單元之記憶製作與物理機制研究(3/3) 2007 茂德科技公司-奈米點非揮發性記憶體 2007 財團法人工業技術研究院-超臨界流體應用於先進半導體製程之研究 2007 財團法人工業技術研究院-微晶矽薄膜成長機制與製程研究 2007 茂德科技公司-奈米點非揮發性記憶體 2007 台灣薄膜電晶體協會-無光罩製程技術材料合成與製程研究-元件製程整合 2007 財團法人工業技術研究院-晶圓表面測試 2008 奈米結構非揮發記憶體的製作與物理機制研究 (1/3) 2008 國家型奈米計畫-次世代奈米結構儲存單元之記憶元件製作與物理機制研究(1/3) 2008 複晶矽薄膜電晶體於照光下之電性量測與可靠度分析 2008 財團法人工業技術研究院(太陽光電)-矽薄膜品質分析與電性研究 2008 財團法人工業技術研究院-微晶矽薄膜特性量測技術研究 2008 奈米點非揮發性記憶體元件製作與物理機制之研究 (1/3) 2009 國家型奈米計畫-次世代奈米結構儲存單元之記憶元件製作與物理機制研究(2/3) 2009 奈米結構非揮發記憶體的製作與物理機制研究 (2/3) 2010 國家型奈米計畫-次世代奈米結構儲存單元之記憶元件製作與物理機制研究(3/3) 2010 奈米結構非揮發記憶體的製作與物理機制研究 (3/3) 2011 國家型奈米計畫-次世代非揮發性電阻式記憶元件製作與物理機制研究(1/3) (總經費：3千450萬元） 2011~2012 台積電公司-Research on fabrication technology and electrical mechanism of novel resistive-RAM (RRAM) devices (I) 2011 台積電公司-SOI MOSFET 電性可靠度量測與物理機制分析 2011 奇美電子公司-金屬氧化物薄膜電晶體之電性機制研究 2011~2012 友達光電公司-金屬氧化物薄膜電晶體 銅製程技術開發 (I) 2011 友達光電公司-應用於有機發光顯示器之金屬氧化物薄膜電晶體電性機制研究與前瞻製程技術開發 2010 友達光電公司-金屬氧化物薄膜電晶體之穩定度研究與前瞻製程技術開發 2011 鉦弘公司-多功能量測設備之探針作動模組效能驗證計畫 2012 國家型奈米計畫-次世代非揮發性電阻式記憶元件製作與物理機制研究(2/3) (總經費：3千450萬元） 2012 行政院原子能委員會核能研究所-光電轉換薄膜及元件於撓曲時特性及結構優化之研究 2012 財團法人工業技術研究院-可摺疊高效能電晶體之研究 2012 中國鋼鐵股份有限公司-矽鋁靶材應用於電晶體鈍化層原理探討及成分最適化研究 2013 國家型奈米計畫-次世代非揮發性電阻式記憶元件製作與物理機制研究(3/3) (總經費：3千450萬元） 2013 台積電公司-High-V MOSFET 電性及可靠度測量與物理機制分析 2013 行政院原子能委員會核能研究所-節能薄膜及元件於撓曲時特性及結構優化之研究 2013 財團法人工業技術研究院-摺疊薄膜電晶體應力與電性行為模型建立 2013 群創光電公司-金屬氧化物薄膜電晶體之電性機制研究與前瞻製程技術開發 2012~2013 台積電公司-Research on fabrication technology and electrical mechanism of novel resistive-RAM (RRAM) devices (II) 2012~2013 友達光電公司-金屬氧化物薄膜電晶體 銅製程技術開發 (II) 2013~2014 台積電公司-Research on fabrication technology and electrical mechanism of novel resistive-RAM (RRAM) devices (III) 2013~2014 友達光電公司-金屬氧化物薄膜電晶體 銅製程技術開發 (III) 2013~2014 友達光電公司-高性能金屬氧化物半導體薄膜電晶體與前瞻製程技術開發 (I) 2013~2014 中國鋼鐵股份有限公司-矽鋁氮化物薄膜應用於電晶體鈍化層原理探討及成分最適化研究 2014 行政院原子能委員會核能研究所-電致變色元件與薄膜電晶體元件之製程整合特性研究 2014 群創光電公司-金屬氧化物薄膜電晶體之閘極驅動於陣列基板技術開發 2014 台積電公司-The Improvement in Performance for Advanced SOI MOSFETs 研究團隊 Research team 發表論文 Publication * 本人研究成果共發表400餘篇 SCI國際期，並獲得 200餘項 專利，包含 129 項中華民國專利 (含公開中專利23項)、62項 美國專利 (含公開中專利 22項) 、 25項 大陸專利 (含公開中專利 12項) 、 2項 日本專利 (公開中) 、 2項 歐洲專利 (含公開中專利 1項) 、 1項 澳洲專利 (公開中) 及 11項 技術轉移 * 近五年 (2009-迄今) 共計發表 195篇 SCI國際期刊，其中本人為通訊作者，發表國際一流期刊Materials Today 共 1 篇，Applied Physics Letters 共 56 篇，IEEE Electron Device Letter 共33 篇 -------------------------------- 2014年發表論文 共20篇 -------------------------------- 01. L. Ji, Y. F. Chang,* B. Fowler, Y. C. Chen, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang, S. M. Sze, E. T. Yu, J. C. Lee, “Integrated One Diode−One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography”, Nano Letters, 14(2), 813-818 (2014) 02. K. H. Liu, T. C. Chang*, K. C. Chang, T. M. Tsai, T. Y. Hsieh, M. C. Chen, B. L. Yeh, W. C. Chou, “Investigation of On-Current Degradation Behavior induced by Surface Hydrolysis Effect under Negative Gate Bias Stress in amorphous InGaZnO Thin-Film Transistors”, Appl. Phys. Lett. 104, 103501 (2014) 03. S. H. Ho, T. C. Chang*, Y. H. Lu, C. E. Chen, J. Y. Tsai, K. J. Liu, T. Y. Tseng, O. Cheng, C. T. Huang, C. S. Lu, “Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement”, Appl. Phys. Lett. 104, 113503 (2014) 04. K. H. Liu, T. C. Chang*, M. S. Wu, Y. S. Hung, P. H. Hung, T. Y. Hsieh, W. C. Chou, A. K. Chu, S. M. Sze, B. L. Yeh, “Investigation of Channel Width-Dependent Threshold Voltage Variation in a-InGaZnO Thin-Film Transistors”, Appl. Phys. Lett. 104, 133503 (2014) 05. J. B. Yang, T. C. Chang*, J. J. Huang, Y. C. Chen, Y. T. Chen, H. C. Tseng, A. K. Chu, S. M. Sze, “Dual operation characteristics of resistance random access memory in Indium-Gallium-Zinc-Oxide thin film transistors”, Appl. Phys. Lett. 104, 153501 (2014) 06. H. L. Chen, T. C. Chang*, T. F. Young, T. M. Tsai, K. C. Chang, R. Zhang, S. Y. Huang, K. H. Chen, J. C. Lou, M. C. Chen, C. C. Shih, S. Y. Huang, J. H. Chen, “Ultra-Violet Light Enhanced Super Critical Fluid Treatment in In-Ga-Zn-O Thin Film Transistor”, Appl. Phys. Lett. 104, 243508 (2014) 07. T. J. Chu, T. M. Tsai, T. C. Chang*, K. C. Chang, R. Zhang, K. H. Chen, J. H. Chen, T. F. Young, J. W. Huang, J. C. Lou, M. C. Chen, S. Y. Huang, H. L. Chen, Y. E. Syu, D. H. Bao, S. M. Sze, “Tri-resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory”, IEEE Electron Device Lett., 35(2), 217-219 (2014) 08. K. C. Chang, T. M. Tsai, T. C. Chang*, K. H. Chen, R. Zhang, Z. Y. Wang, J. H. Chen, T. F. Young, M. C. Chen, T. J. Chu, S. Y. Huang, Y. E. Syu, D. H. Bao, S. M. Sze, “Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory”, IEEE Electron Device Lett., 35(5), 530-532 (2014) 09. R. Zhang, K. C. Chang, T. C. Chang*, T. M. Tsai, S. Y. Huang, W. J. Chen, K. H. Chen, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, H. L. Chen, S. P. Liang, Y. E. Syu, S. M. Sze, “Characterization of Oxygen Accumulation in Indium-tin-oxide for Resistance Random Access Memor”, IEEE Electron Device Lett., 35(6), 630-632 (2014) 10. C. C. Shih, K. C. Chang, T. C. Chang*, T. M. Tsai, R. Zhang, J. H. Chen, K. H. Chen, T. F. Young, H. L. Chen, J. C. Lou, T. J. Chu, S. Y. Huang, D. H. Bao, Simon M. Sze, “Resistive Switching Modification by Ultra-violet Illumination in Transparent Electrode Resistive Random Access Memory”, IEEE Electron Device Lett., 35(6), 633-635 (2014) 11. C. E. Chen, T. C. Chang*, H. M. Chen, B. You, K. H. Yang, S. H. Ho, J. Y. Tsai, K. J. Liu, Y. H. Lu, Y. J. Hung, Y. H. Tai, Tseung-Yuen Tseng, “On the Origin of Anomalous Off-Current under Hot Carrier Stress in p-channel DDDMOS Transistors with STI Structure”, IEEE Electron Device Lett., 35(6), 651-653 (2014) 12. G. W. Chang, T. C. Chang*, J. C. Jhu, T. M. Tsai, K. C. Chang, Y. E. Syu, Y. H. Tai, F. Y. Jian, Y. C. Hung, “Temperature dependent instability of bias stress in InGaZnO thin film transistors”, IEEE Trans. Electron Devices, 61(6), 2119-2124 (2014) 13. K. C. Chang, T. M. Tsai, T. C. Chang*, R. Zhang, J. H. Chen, K. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, G. R. Liu, Y. T. Su, M. C. Chen, J. H. Pan, K. H. Liao, Y. H. Tai, T. F. Young, Simon M. Sze, “Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment”, The Journal of Supercritical Fluids, 85, 183-189 (2014) 14. C. Ye, C. Zhan, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang*, T. F. Deng, H. Wang*, “Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon”, Applied Physics Express, 7, 034101 (2014) 15. Y. J. Chen, H. L. Chen, T. F. Young*, T. C. Chang*, T. M. Tsai, K. C. Chang, R. Zhang, K. H. Chen, J. C. Lou, T. J. Chu, J. H. Chen, D. H. Bao, S. M Sze, “Hydrogen induced redox mechanism in amorphous carbon resistive random access memory”, Nanoscale Res. Lett., 9, 52 (2014) 16. H. R. Chen, Y. C. Chen, T. C. Chang*, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, N. C. Chuang, K. Y. Wang, “Surface Scattering Mechanisms of Tantalum Nitride Thin-Film Resistor”, Nanoscale Res. Lett., 9, 177 (2014) 17. J. B. Yang, T. C. Chang*, J. J. Huang, Y. T. Chen, H. C. Tseng, A. K. Chu, S. M. Sze, M. J. Tsai, D. H. Bao, “Influence of oxygen concentration on self-compliance RRAM in indium oxide film”, IEEE Electron Device Lett., 35(9), 909-911 (2014) 18. H. M. Chen, T. C. Chang*, Y. H. Tai, Y. C. Chen, M. C. Yang, C. H. Chou, J. F. Chang, S. Z. Deng, “Ultra-high Sensitivity Self-amplification Phototransistor Achieved by Automatic Energy Band Lowering Behavior”, has been accepted by IEEE Trans. Electron Devices (2014) 19. Y. J. Chen, K. C. Chang, T. C. Chang*, H. L. Chen, T. F. Young, T. M. Tsai, R. Z., T. J. Chu, J. F. Ciou, J. C. Lou, K. H. Chen, J. H. Chen, J. C. Zheng, S. M. Sze, “Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor”, has been accepted by IEEE Trans. Electron Devices (2014) 20. T.Y. Hsieh, T.C. Chang*, T.C. Chen and M.Y. Tsai, “Review of Present Reliability Challenges in Amorphous In-Ga-Zn-O Thin Film Transistors”, ECS J. Solid State Sci. Technol., 3(9), Q3058-Q3070 (2014) 21. H.C. Tung, T.C. Chang*, L. Chang, S.Y. Huang, K.H. Liu and K. H. Plooga,” Enhancing the Bias and Illumination Stabilities of AamorphousIn-GaZnO Thin Film Transistors Using a SiAlNO Passivation Layer”, ECS Solid State Lett., 3(5), P53-P56 (2014) 22. Y. J. Chen, K. C. Chang, T. C. Chang*, H. L. Chen, T. F. Young, T. M. Tsai, R. Z., T. J. Chu, J. F. Ciou, J. C. Lou, K. H. Chen, J. H. Chen, J. C. Zheng, S. M. Sze, “Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor”, IEEE Electron Device Lett., 35(10), 1016-1018 (2014) 23. M.Y. Tsai, T.C. Chang*, A.K. Chu, T.Y. Hsieh, K.Y. Lin, Y.C. Wu, S.F. Huang, C.L. Chiang, P.L. Chen, T.C. Lai, C.C. Lo, A. Lien, “Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor”, Thin Solid Film, 572(1), 79–84 (2014) 24. B.W. Chen, T.C. Chang*, Y.J. Hung, T.Y. Hsieh, M.Y. Tsai,P.Y. Liao, W.W. Tsai, W.J. Chiang, “Investigation of temperature-dependent asymmetric degradation behavior induced by hot carrier effect in oxygen ambiance in In–Ga–Zn-O thin film transistors”, Thin Solid Film, 572(1), 33-38 (2014) 25. K.J. Liu, T.C. Chang*, R.Y. Yang, C.E. Chen, S.H. Ho, J.Y Tsai,T.Y. Hsieh, O. Cheng, C.T. Huang, “Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs”, Thin Solid Film, 572(1), 39-43 (2014) 26. K.H. Liu, T.C. Chang, W.C. Chou, H.M. Chen, M.Y. Tsai, M.S. Wu, Y.S. Hung, P.H. Hung, T.Y.Hsieh, Y.H. Tai, A.K. Chu, and B.L. Yeh,”Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors”, J. Appl. Phys. 116, 154508 (2014) 27. T.J. Chu, T.M. Tsai, T.C. Chang*, K.C. Chang, C.H. Pan, K.H. Chen, J.H. Chen, H.L. Chen, H.C. Huang, C.C. Shih, Y.E. Syu, J.C. Zheng and Simon M. Sze, “Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory”, Appl. Phys. Lett. 105, 223514(2014) -------------------------------- 2013年發表論文 共55篇 -------------------------------- 01. S. H. Ho, T. C. Chang*, C. W. Wu, W. H. Lo, C. E. Chen, J. Y. Tsai, G. R. Liu, H. M. Chen, Y. S. Lu, B. W. Wang, T. Y. Tseng, O. Cheng, C. T. Huang, and S. M. Sze, “Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors”, Appl. Phys. Lett. 102, 012103 (2013) 02. S. H. Ho, T. C. Chang*, B. W. Wang, Y. S. Lu, W. H. Lo, C. E. Chen, J. Y. Tsai, H. M. Chen, G. R. Liu, T. Y. Tseng, O. Cheng, C. T. Huang, and X. X. Cao, “Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks”, Appl. Phys. Lett. 102, 012106 (2013) 03. Y. T. Chen, T. C. Chang*, J. J. Huang, H. C. Tseng, P. C. Yang, A. K. Chu, J. B. Yang, H. C. Huang, D. S. Gan, M. J. Tsai, and S. M. Sze, “Influence of Molybdenum Doping on the Switching Characteristic in Silicon oxide based Resistive Switching Memory”, Appl. Phys. Lett. 102, 043508 (2013) 04. J. Y. Tsai, T. C. Chang*, W. H. Lo, C. E. Chen, S. H. Ho, H. M. Chen, Y. H. Tai, O. Cheng, C. T. Huang, “Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric”, Appl. Phys. Lett. 102, 073507 (2013) 05. K. H. Chen*, R. Zhang, T. C. Chang*, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih, C. W. Tung, Y. E. Syu, S. M. Sze, “Hopping Conduction Distance Dependent Activation Energy Characteristics of Zn:SiO2 Resistance Random Access Memory Devices”, Appl. Phys. Lett. 102, 133503 (2013) 06. Y. E. Syu, T. C. Chang*, J. H. Lou, T. M. Tsai, K. C. Chang, M. J. Tsai, Y. L. Wang, M. Liu, S. M. Sze, “Atomic-Level Quantized Reaction of HfOx Memristor”, Appl. Phys. Lett. 102, 172903 (2013) 07. Y. L. Yang, T. F. Young*, T. C. Chang, F. Y. Shen, J. H. Hsu, T. M. Tsai, K. C. Chang, H. L. Chen, “Mechanical Stress Influence on Electronic Transport in Low-k SiOC Dielectric Single Damascene Capacitor”, Appl. Phys. Lett. 102, 192912 (2013) 08. J. W. Huang*, R. Zhang, T. C. Chang*, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, H. L. Chen, Y. C. Pan, X. Huang, F. Y. Zhang, Y. E. Syu, S. M. Sze, “The Effect of High/Low Permittivity in Bilayer HfO2/BN Resistance Random Access Memory”, Appl. Phys. Lett. 102, 203507 (2013) 09. Y. T. Chen, T. C. Chang*, H. K. Peng, H. C. Tseng, J. J. Huang, J. B. Yang, A. K. Chu, T. F. Young, S. M. Sze, “Insertion of a Si layer to reduce operation current for resistance random access memory applications”, Appl. Phys. Lett. 102, 252902 (2013) 10. T. M. Tsai*, K. C. Chang, R. Zhang, T. C. Chang*, J. C. Lou, J. H. Chen, T. F. Young, B. H. Tseng, C. C. Shih, Y. C. Pan, M. C. Chen, J. H. Pan, Y. E. Syu, S. M. Sze, “Performance and Characteristics of Double Layer Porous Silicon Oxide Resistance Random Access Memory”, Appl. Phys. Lett. 102, 253509 (2013) 11. M. Y. Tsai, T. C. Chang*, A. K. Chu, T. Y. Hsieh, T. C. Chen, K. Y. Lin, W. W. Tsai, W. J. Chiang, J. Y. Yan, “High temperature-induced abnormal suppression of sub-threshold swing and on-current degradation under hot-carrier stress in a-InGaZnO thin film transistors”, Appl. Phys. Lett. 103, 012101 (2013) 12. J. Y. Tsai, T. C. Chang*, W. H. Lo, C. E. Chen, S. H. Ho, H. M. Chen, Y. H. Tai, O. Cheng, and C. T. Huang, “Abnormal Sub-threshold Swing Degradation under Dynamic Hot Carrier Stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors”, Appl. Phys. Lett. 103, 022106 (2013) 13. J. J. Huang, T. C. Chang*, C. C. Yu, H. C. Huang, Y. T. Chen, H. C. Tseng, J. B. Yang, S. M. Sze, D. S. Gan, A. K. Chu, J. Y. Lin, M. J. Tsai, “Enhancement of the stability of resistive switching characteristics by conduction path reconstruction”, Appl. Phys. Lett. 103, 042902 (2013) 14. K. C. Chang, T. M. Tsai, R. Zhang, T. C. Chang*, K. H. Chen, J. H. Chen, T. F. Young, J. C. Lou , T. J. Chu, C. C. Shih, J. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, M. C. Chen, J. J. Wu, Y. Hu, S. M. Sze, “Electrical Conduction Mechanism of Zn:SiOx Resistance Random Access Memory with Supercritical CO2 Fluid Process”, Appl. Phys. Lett. 103, 083509 (2013) 15. J. B. Yang, T. C. Chang*, J. J. Huang, Y. T. Chen, H. C. Tseng, A. K. Chu, S. M. Sze, M. J. Tsai, “ Low power consumption resistance random access memory with Pt/InOx/TiN structure”, Appl. Phys. Lett. 103, 102903 (2013) 16. M. Y. Tsai, T. C. Chang*, A. K. Chu, T. C. Chen, T. Y. Hsieh, K. Y. Lin, W. W. Tsai, W. J. Chiang, J. Y. Yan, “Asymmetric structure induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor”, Appl. Phys. Lett. 103, 143508 (2013) 17. Y. T. Su, K. C. Chang, T. C. Chang*, T. M Tsai, R. Zhang, J. C. Lou, J. H. Chen, T. F. Young, K. H. Chen, B. H. Tseng, C. C. Shih, Y. L. Yang, M. C. Chen, T. J. Chu, J. H. Pan, Y. E. Syu, S. M. Sze, “Characteristics of Hafnium Oxide Resistance Random Access Memory with Different Setting Compliance Current”, Appl. Phys. Lett. 103, 163502 (2013) 18. J. Y. Tsai, T. C. Chang*, W. H. Lo, S. H. Ho, C. E. Chen, H. M. Chen, T. Y. Tseng, Y. H. Tai, O. Cheng , C. T. Huang, “Abnormal Threshold Voltage Shift under Hot Carrier Stress in Ti1-xNx/HfO2 p-channel MOSFETs”, J. Appl. Phys. 114, 124505 (2013) 19. S. H. Ho, T. C. Chang*, Y. H. Lu, B. W. Wang, W. H. Lo, C. E. Chen, J. Y. Tsai, H. M. Chen, K. J. Liu, T. Y. Tseng, O. Cheng, C. T. Huang, T. F. Chen, X. X. Cao, “High-k shallow traps observed by charge pumping with varying discharging times”, J. Appl. Phys. 114, 174506 (2013) 20. J. C. Jhu, T. C. Chang*, G. W. Chang, Y. H. Tai, W. W. Tsai, W. J. Chiang, J. Y. Yan, “Reduction of Defect Formation in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors by N2O Plasma Treatment”, J. Appl. Phys. 114, 204501 (2013) 21. R. Zhang, T. M. Tsai*, T. C. Chang*, K. C. Chang, K. H. Chen, J. C. Lou, T. F. Young, J. H. Chen, S. Y. Huang, M. C. Chen, C. C. Shih, H. L. Chen, J. H. Pan, C. W. Tung, Y. E. Syu, S. M. Sze, “Mechanism of Power Consumption Inhibitive Multi-layer Zn:SiO2/SiO2 Structure Resistance Random Access Memory”, J. Appl. Phys. 114, 234501 (2013) 22. T. Y. Hsieh, T. C. Chang*, T. C. Chen, Y. T. Chen, M. Y. Tsai, A. K. Chu, Y. C. Chung, H. C. Ting, and C. Y. Chen, “Self-Heating Effect Induced Degradation Behaviors in a-InGaZnO Thin-Film Transistors”, IEEE Electron Device Lett., 34(1), 63-65 (2013) 23. Y. T. Chen, T. C. Chang*, P. C. Yang, J. J. Huang, H. C. Tseng, H. C. Huang, J. B. Yang, A. K. Chu, D. S. Gan, M. J. Tsai, and S. M. Sze, “Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for SiO2-based Structure”, IEEE Electron Device Lett., 34(2), 226-228 (2013) 24. K. C. Chang, T. M. Tsai, T. C. Chang*, H. H. Wu, J. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, G. R. Liu, Y. T. Su, M. C. Chen, J. H. Pan, J. Y. Chen, C. W. Tung, H. C. Huang, Y. H. Tai, D. S. Gan, S. M. Sze, “Characteristics and Mechanisms of Silicon Oxide Based Resistance Random Access Memory”, IEEE Electron Device Lett., 34(3), 399-401 (2013) 25. T. J. Chu, T. C. Chang*, T. M. Tsai, K. C. Chang, Y. E. Syu, G. W. Chang, Y. F. Chang, M. C. Chen, J. H. Lou, J. H. Pan, J. Y. Chen, Y. H. Tai, C. Ye, H. Wang, and S. M. Sze, “Charge Quantity Influence on Resistance Switching Characteristic during Forming Process”, IEEE Electron Device Lett., 34(4), 502-504 (2013) 26. K. C. Chang, T. M. Tsai, T. C. Chang*, H. H. Wu, K. H. Chen, J. H. Chen, T. J. Chu, J. Y. Chen, C. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, G. W. Chang, M. C. Chen, H. C. Huang, Y. H. Tai, D. S. Gan, T. F. Young, S. M. Sze, “Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices”, IEEE Electron Device Lett., 34(4), 511-513 (2013) 27. T. Y. Hsieh, T. C. Chang*, Y. T. Chen, P. Y. Liao, T. C. Chen, M. Y. Tsai, Y. C. Chen, B. W. Chen, A. K. Chu, C. H. Chou, W. C. Chung, J. F. Chang, “Hot-Carrier Effect on amorphous In-Ga-Zn-O Thin Film Transistor with a Via-Contact Structure”, IEEE Electron Device Lett., 34(5), 638-640 (2013) 28. K. C. Chang, R. Zhang, T. C. Chang*, T. M. Tsai, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, Y. L. Yang, Y. C. Pan, G. W. Chang, T. J. Chu, C. C. Shih, J. Y. Chen, C. H. Pan, Y. T. Su, Y. E. Syu, Y. H. Tai, S. M. Sze, “Origin of Hopping Conduction in Graphene-Oxide Doped Silicon Oxide Resistance Random Access Memory Devices”, IEEE Electron Device Lett., 34(5), 677-679 (2013) 29. K. C. Chang, C. H. Pan, T. C. Chang*, T. M. Tsai, T. F. Young, J. H. Chen, C. C. Shih, T. J. Chu, J. Y. Chen, Y. T. Su, J. P. Jiang, K. H. Chen, H. C. Huang, Y. E. Syu, D. S. Gan, S. M. Sze, “Hopping Effect of Hydrogen-doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment”, IEEE Electron Device Lett., 34(5), 617-619 (2013) 30. H. C. Tseng, T. C. Chang*, Y. C. Wu, S. W. Wu, J. J. Huang, Y. T. Chen, J. B. Yang, T. P. Lin, S. M. Sze, M. J. Tsai, Y. L. Wang, A. K. Chu, “Impact of electroforming current on self-compliance resistive switching in an ITO/Gd:SiOx/TiN structure”, IEEE Electron Device Lett., 34(7), 858-860 (2013) 31. Y. E. Syu, R. Zhang, T. C. Chang*, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, M. C. Chen, Y. L. Yang, C. C. Shih, T. J. Chu, J. Y. Chen, C. H. Pan, Y. T. Su, H. C. Huang, D. S. Gan, S. M. Sze, “Endurance Improvement Technology with Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device”, IEEE Electron Device Lett., 34(7), 864-866 (2013) 32. Y. L. Yang, T. F. Young*, T. C. Chang, J. H. Hsu, T. M. Tsai, F. Y. Jian, K. C. Chang, “Mechanical Stress Influence on Electronic Transport in Low-kappa SiOC Dielectric Dual Damascene Capacitor”, IEEE Electron Device Lett., 34( 
图片说明: Cool , 1056--1058(2013) 33. T. Y. Hsieh, T. C. Chang*, Y. T. Chen, P. Y. Liao, T. C. Chen, M. Y. Tsai, Y. C. Chen, B. W. Chen, A. K. Chu, C. H. Chou, W. C. Chung, J. F. Chang, “Characterization and Investigation of Hot-Carrier Effect in Via-Contact Type a-InGaZnO Thin-Film Transistors”, IEEE Trans. Electron Devices, 60(5), 1681-1688 (2013) 34. Y. C. Chen, T. C. Chang*, H. W. Li, W. F. Chung, T. Y. Hsieh, “Analysis of Electrical Characteristics and Reliability Change of Zinc-Tin-Oxide Thin-Film Transistors by Photo-Thermal Treatment”, ECS Solid State Lett., 2(9) Q72-Q74 (2013) 35. C. E. Chen, T. C. Chang*, B. You, W. H. Lo, S. H. Ho, C. H. Dai, J. Y. Tsai, H. M. Chen, G. R. Liu, Y. H. Tai, T. Y. Tseng, “Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-channel MOSFETs”, ECS Solid State Lett., 2(11) Q90-Q92 (2013) 36. Y. C. Chen, T. C. Chang*, H. W. Li, W. F. Chung, T. Y. Hsieh, Y. H. Chen, W. W. Tsai, W. J. Chiang, J. Y. Yan, “Dependence of light-accelerated instability on bias and environment in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors”, ECS Journal of Solid State Science and Technology, 2(4), Q74-Q76 (2013) 37. S. H. Ho, T. C. Chang*, C. W. Wu, W. H. Lo, C. E. Chen, J. Y. Tsai, H. M. Chen, G. R. Liu, T. Y. Tseng, O. Cheng, C. T. Huang , D. Chen , S. M. Sze, “Anomalous gate current hump after dynamic negative bias stress and negative-bias temperature-instability in p-MOSFETs with HfxZr1-xO2 and HfO2/metal gate stacks”, ECS Journal of Solid State Science and Technology, 2(9), Q187-Q191 (2013) 38. R. Zhang, K. C. Chang, T. C. Chang*, T. M. Tsai, K. H. Chen, J. C. Lou, J. H. Chen, T. F. Young, C. C. Shih, Y. L. Yang, Y. C. Pan, T. J. Chu, S. Y. Huang, C. H. Pan, Y. T. Su, Y. E. Syu, S. M. Sze, “High Performance of Graphene Oxide Doped Silicon Oxide Based Resistance Random Access Memory”, Nanoscale Res. Lett., 8, 497 (2013) 39. K. C. Chang, T. M. Tsai, T. C. Chang*, K. H. Chen, T. F. Young, J. H. Chen, R. Zhang, J. C. Lou, S. Y. Huang, Y. C. Pan, H. C. Huang, Y. E. Syu, D. S. Gan, S. M. Sze, “Space Electric Field Concentrated Effect for Zr:SiO2 RRAM Devices Using Porous SiO2 Buffer Layer”, Nanoscale Res. Lett., 8, 523 (2013) 40. W. H. Lo, T. C. Chang*, C. H. Dai, W. L. Chung, C. E. Chen, S. H. Ho, J. Y. Tsai, H. M. Chen, G. R. Liu, O. Cheng, and C. T. Huang, “Impact of Strain on Gate-Induced Floating Body Effect for Partially Depleted Silicon-On-Insulator p-type Metal-Oxide-Semiconductor- Field-Effect-Transistors”, Thin Solid Films, 528, 10-18 (2013) 41. J. B. Yang, T. C. Chang*, J. J. Huang, Y. T. Chen, P. C. Yang, H. C. Tseng, A. K. Chu ,S. M. Sze , and M. J. Tsai, “Role of InGaOx resistive switching characteristics on the performances of resistance random access memory of Pt/IGO /TiN device”, Thin Solid Films, 528, 26-30 (2013) 42. J. J. Huang, T. C. Chang*, P. C. Yang, Y. T. Chen, H. C. Tseng, J. B. Yang, S. M. Sze, A. K. Chu, and M. J. Tsai, “Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer”, Thin Solid Films, 528, 31-35 (2013) 43. T. Y. Hsieh, T. C. Chang*, T. C. Chen, M. Y. Tsai, and Y. T. Chen, “Investigating Degradation Behavior of InGaZnO Thin-Film Transistors induced by Charge-Trapping Effect under DC and AC Gate-Bias Stress”, Thin Solid Films, 528, 53-56 (2013) 44. M. Y. Tsai, T. C. Chang*, A. K. Chu, T. C. Chen, T. Y. Hsieh, Y. T. Chen, W. W. Tsai, W. J. Chiang, and J. Y. Yan, “Investigating the degradation behavior under hot carrier stress for InGaZnO TFTs with symmetric and asymmetric structures”, Thin Solid Films, 528, 57-60 (2013) 45. M. C. Chen, T. C. Chang*, Y. C. Chiu, S. C. Chen, S. Y. Huang, K. C. Chang, T. M. Tsai, K. H. Yang,S. M. Sze, and M. J. Tsai, “The resistive switching characteristics in TaON films for nonvolatile memory applications”, Thin Solid Films, 528, 224-228 (2013) 46. J. B. Yang, T. C. Chang*, J. J. Huang, S. C. Chen, P. C. Yang, Y. T. Chen, H. C. Tseng, S. M. Sze, A. K. Chu, M. J. Tsai, “Resistive switching characteristics of gallium oxide for nonvolatile memory application”, Thin Solid Films, 529, 200-204 (2013) 47. H. C. Tseng, T. C. Chang*, K. H. Cheng, J. J. Huang, Y. T. Chen, F. Y. Jian, S. M. Sze, M. J. Tsai, A. K. Chu, and Y. L. Wang, “Investigating the bipolar resistive switching characteristics between filament type and interface type of BON-based resistive switching memory”, Thin Solid Films, 529, 389-393 (2013) 48. S. Y. Huang, T. C. Chang*, M. C. Chen, T. C. Chen, F. Y. Jian, Y. C. Chen, H. C. Huang, and D. S. Gan, “Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer”, Surface & Coatings Technology, 231, 117-121 (2013) 49. G. W. Chang, T. C. Chang*, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, F. Y. Jian, Y. C. Hung, and Y. H. Tai, “N2O Plasma Treatment Suppressed Temperature-dependent Sub-threshold Leakage Current of amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors”, Surface & Coatings Technology, 231, 281-284 (2013) 50. T. C. Chen, T. C. Chang*, T. Y. Hsieh, M. Y. Tsai, C. T. Tsai, S. C. Chen, C. S. Lin, and F. Y. Jian, “Analysis the effects of ambient dependence for InGaZnO TFTs under illuminated bias stress”, Surface & Coatings Technology, 231, 465-470 (2013) 51. T. Y. Hsieh, T. C. Chang*, T. C. Chen, M. Y. Tsai, F. Y. Jian, and C. S. Lin, “Investigation of gate-bias stress and hot-carrier stress induced instability of InGaZnO thin-film transistors under different environment”, Surface & Coatings Technology, 231, 478-481 (2013) 52. Y. C. Chen, T. C. Chang*, H. W. Li, W. F. Chung, S. C. Chen, C. P. Wu, Y. H. Chen, Y. H. Tai, T. Y. Tseng, and F. S. Yeh(Huang), “Characterization of Environment-Dependent Hysteresis in Indium Gallium Zinc Oxide Thin Film Transistors”, Surface & Coatings Technology, 231, 531-534 (2013) 53. Y. C. Lai, D. Y. Wang, I. S. Huang, Y. T. Chen, Y. H. Hsu, T. Y. Lin, H. F. Meng, T. C. Chang, Y. J. Yang, C. C. Chen, F. C. Hsuh, and Y. F. Chen*, “Low operation voltage macromolecular composite memory assisted by graphene nanoflakes”, J. Mater. Chem. C, 1, 552 (2013) 54. C. N. Chen, T. Y. Dong,* T. C. Chang, M. C. Chen, H. L. Tsai, and W. S. Hwang, “A solution-based β-diketonate silver ink for direct printing of highly conductive features on a flexible substrate”, J. Mater. Chem. C, 1, 5161-5168 (2013) 55. Y. C. Lai, F. C. Hsu, J. Y. Chen, J. H. He, T. C. Chang, Y. P. Hsieh, T. Y. Lin, Y. J. Yang, and Y. F. Chen*, “Transferable and Flexible Label Like Macromolecular Memory on Arbitrary Substrates with High Performance and a Facile Methodology”, Adv. Mater., 25(19), 2733-2739 (2013) -------------------------------- 2012年發表論文 共33篇 -------------------------------- [01]. Y. E. Syu, T. C. Chang*, T. M. Tsai, G. W. Chang, K. C. Chang, Y. H. Tai, M. J. Tsai, Y. L. Wang, and S. M. Sze, “Silicon introduced Effect on Resistive Switching Characteristics of WOX Thin Films”, Appl. Phys. Lett. 100, 022904 (2012) [02]. W. H. Lo, T. C. Chang*, J. Y. Tsai, C. H. Dai, C. E. Chen, S. H. Ho, H. M. Chen, O. Cheng, and C. T. Huang, “Charge Trapping induced Drain-Induced-Barrier-Lowering in HfO2/TiN p-channel Metal-Oxide-Semiconductor-Field-Effect-Transistors under Hot Carrier Stress”, Appl. Phys. Lett. 100, 152102 (2012) [03]. G. W. Chang, T. C. Chang*, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, Y. H. Tai, F. Y. Jian, Y. C. Hung, “Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress”, Appl. Phys. Lett. 100, 182103 (2012) [04]. S. Y. Huang, T. C. Chang*, L. W. Lin, M. C. Yang, M. C. Chen, J. C. Jhu, and F. Y. Jian, “The Asymmetrical Degradation Behavior on Drain Bias Stress under Illumination for InGaZnO Thin Film Transistors”, Appl. Phys. Lett. 100, 222901 (2012) [05]. T. Y. Hsieh, T. C. Chang*, T. C. Chen, M. Y. Tsai, Y. T. Chen, Y. C. Chung, H. C. Ting, and C. Y. Chen, “Origin of Self-Heating Effect Induced Asymmetrical Degradation Behavior in InGaZnO Thin-Film Transistors”, Appl. Phys. Lett. 100, 232101 (2012) [06]. Y. C. Chen, T. C. Chang*, H. W. Li, W. F. Chung, C. P. Wu, S. C. Chen, J. Lu, Y. H. Chen, and Y. H. Tai, “High-stability oxygen sensor based on amorphous zinc tin oxide thin film transistor”, Appl. Phys. Lett. 100, 262908 (2012) [07]. T. C. Chen, T. C. Chang*, T. Y. Hsieh, M. Y. Tsai, Y. T. Chen, Y. C. Chung, H. C. Ting, C. Y. Chen, “Self-heating enhanced charge trapping effect for InGaZnO Thin Film Transistor”, Appl. Phys. Lett. 101, 042101 (2012) [08]. S. H. Ho, T. C. Chang*, C. W. Wu, W. H. Lo, C. E. Chen, J. Y. Tsai, H. P. Luo, T. Y. Tseng, O. Cheng, C. T. Huang, S. M. Sze, “Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors”, Appl. Phys. Lett. 101, 052105 (2012) [09]. T. M. Tsai, K. C. Chang, T. C. Chang*, Y. E. Syu, K. H. Liao, B. H. Tseng, S. M. Sze, “Dehydroxyl Effect of Sn-doped Silicon Oxide Resistance Random Access Memory with Supercritical CO2 Fluid Treatment”, Appl. Phys. Lett. 101, 112906 (2012) [10]. W. H. Lo, T. C. Chang*, J. Y. Tsai, C. H. Dai, C. E. Chen, S. H. Ho, H. M. Chen, O. Cheng, and C. T. Huang, “Abnormal interface state generation under positive bias Stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors”, Appl. Phys. Lett. 101, 133505 (2012) [11]. T. Y. Hsieh, T. C. Chang*, T. C. Chen, Y. C. Chen, Y. T. Chen, P. Y. Liao, A. K. Chu, W. W. Tsai, W. J. Chiang, and J. Y. Yan, “Application of in-cell touch sensor using photo-leakage current in dual gate a-InGaZnO thin-film transistors”, Appl. Phys. Lett. 101, 212104 (2012) [12]. Y. C. Chen, T. C. Chang*, H. W. Li, T. Y. Hsieh, T. C. Chen, C. P. Wu, C. H. Chou, W. C. Chung, J. F. Chang, and Y. H. Tai, “The suppressed negative bias illumination-induced instability in In-Ga-Zn–O thin film transistors with fringe field structure”, Appl. Phys. Lett. 101, 223502 (2012) [13]. S. H. Ho, T. C. Chang*, Y. S. Lu, W. H. Lo, C. E. Chen, J. Y. Tsai, H. M. Chen, C. W. Wu, H. P. Luo, G. R. Liu, T. Y. Tseng, O. Cheng, C. T. Huang, and S. M. Sze, “Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors”, Appl. Phys. Lett. 101, 233509 (2012) [14]. S. Y. Huang, T. C. Chang*, M. C. Yang, L. W. Lin, M. H. Wu, K. H. Yang, M. C. Chen, Y. J. Chiu, and B. L. Yeh, “Photoelectric Heat Effect induce Instability on the Negative Bias Temperature Illumination Stress for InGaZnO Thin Film Transistors”, Appl. Phys. Lett. 101, 253502 (2012) [15]. K. C. Chang, T. M. Tsai, T. C. Chang*, Y. E. Syu, S. L. Chuang, C. H. Li, D. S. Gan, S. M. Sze, “The Effect of Silicon Oxide Based RRAM with Tin Doping”, Electrochem. Solid State Lett., 15(3), H65-H68 (2012) [16]. S. Y. Huang, T. C. Chang*, M. C. Chen, S. C. Chen, T. C. Chen, and F. Y. Jian, “Thermal effect on the gate-drain bias stress for amorphous InGaZnO thin film transistors”, Electrochem. Solid State Lett., 15(5), H161-H163 (2012) [17]. W. F. Chung, T. C. Chang*, C. S. Lin, K. J. Tu, H. W. Li, T. Y. Tseng, Y. C. Chen, and Y. H. Tai, “Oxygen-Adsorption-Induced Anomalous Capacitance Degradation on Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors under Hot-Carrier Stress”, J. Electrochem. Soc., 159 (3), H286-H289 (2012) [18]. C. H. Dai, T. C. Chang*, A. K. Chu, Y. J. Kuo, S. H. Ho, T. Y. Hsieh, W. H. Lo, C. E. Chen, J. M. Shih, W. L. Chung, B. S. Dai, H. M. Chen, G. Xia, O. Cheng, and C. T. Huang, “Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate Stacks”, J. Electrochem. Soc., 15 (6), H211-H214 (2012) [19]. T. Y. Hsieh, T. C. Chang*, T. C. Chen, M. Y. Tsai, Y. T. Chen, Y. C. Chung, H. C. Ting, and C. Y. Chen, “Investigating Degradation Behaviors Induced by DC and AC Bias-Stress under Light Illumination in InGaZnO Thin-Film Transistors”, Journal of Solid State Science and Technology, 1(1), Q6-Q10 (2012) [20]. Y. F. Chang, Y. T. Tsai, Y. E. Syu, and T. C. Chang*, “Study of electric faucet structure by embedding Co nanocrystals in a FeOx-based memristor”, Journal of Solid State Science and Technology, 1(3), Q57-Q61 (2012) [21]. Y. F. Chang, Y. T. Tsai, G. W. Chang, Y. E. Syu, Y. H. Tai, and T. C. Chang*, “Study of resistive switching characteristics on a temperature-sensitive FeOx-transition layer in a TiN/SiO2/FeOx/Fe structure”, Journal of Solid State Science and Technology, 1(5), Q91-Q95 (2012) [22]. Y. T. Chen, T. C. Chang*, J. J. Huang, H. C. Tseng, P. C. Yang, A. K. Chu, J. B. Yang, M. J. Tsai, Y. L. Wang, S. M. Sze, “Thermal Impact on the activation of resistive switch in silicon oxide based RRAM”, ECS Solid State Lett., 1(4) P57-P59 (2012) [23]. W. H. Lo, T. C. Chang*, C. H. Dai, W. L. Chung, C. E. Chen, S. H. Ho, O. Cheng, and C. T. Huang, “Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as indicated from NBTI degradation”, IEEE Electron Device Lett., 33(3), 303-305 (2012) [24]. Y. E. Syu, T. C. Chang*, T. M. Tsai, G. W. Chang, K. C. Chang, J. H. Lou, Y. H. Tai, M. J. Tsai, Y. L. Wang, and S. M. Sze, “Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device”, IEEE Electron Device Lett., 33(3), 342-344 (2012) [25]. G. W. Chang, T. C. Chang*, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, Y. H. Tai, F. Y. Jian, and Y. C. Hung, “Abnormal subthreshold leakage current at high temperature in InGaZnO thin film transistors”, IEEE Electron Device Lett., 33(4), 540-542 (2012) [26]. T. Y. Hsieh, T. C. Chang*, T. C. Chen, M. Y. Tsai, Y. T. Chen, F. Y. Jian, Y. C. Chung, H. C. Ting, and C. Y. Chen, “Investigating the Drain-Bias Induced Degradation Behavior under Light Illumination for InGaZnO Thin-Film Transistors”, IEEE Electron Device Lett., 33(7), 1000-1002 (2012) [27]. J. J. Huang, T. C. Chang*, J. B. Yang, S. C. Chen, P. C. Yang, Y. T. Chen, H. C. Tseng, S. M. Sze, A. K. Chu, and M. J. Tsai, “Influence of oxygen concentration on resistance switching characteristics of gallium oxide”, IEEE Electron Device Lett., 33(10), 1387-1389 (2012) [28]. T. M. Tsai*, K. C. Chang, T. C. Chang*, G. W. Chang, Y. E. Syu, Y. T. Su, G. R. Liu, K. H. Liao, M. C. Chen, H. C. Huang, Y. H. Tai, D. S. Gan, and S. M. Sze, “Origin of Hopping Conduction in Sn-doped Silicon Oxide RRAM with Supercritical CO2 fluid treatment”, IEEE Electron Device Lett., 33(12), 1693-1695 (2012) [29]. T. M. Tsai*, K. C. Chang, T. C. Chang*, Y. E. Syu, S. L. Chuang, G. W. Chang, G. R. Liu, M. C. Chen, H. C. Huang, S. K. Liu, Y. H. Tai, D. S. Gan, Y. L. Yang, T. F. Young, B. H. Tseng, K. H. Chen, M. J. Tsai, and S. M. Sze, “Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated into Silicon Oxide Dielectrics for IC Applications”, IEEE Electron Device Lett., 33(12), 1696-1698(2012) [30]. T. Y. Hsieh, T. C. Chang*, T. C. Chen, Y. T. Chen, M. Y. Tsai, Y. C. Chung, H. C. Ting, and C. Y. Chen,“Systematic Investigations on Self-Heating Effect-Induced Degradation Behavior in a-InGaZnO Thin-Film Transistors”, IEEE Trans. Electron Devices , 59(12), 3389-3394(2012). [31]. S. Y. Huang, T. C. Chang*, M. C. Chen, F. Y. Jian, S. C. Chen, T. C. Chen, J. L. Jheng, M. J. Lou, and F. S. Yeh(Huang), “Analyzing the current crowding effect induced by oxygen absorption of amorphous InGaZnO thin film transistor by capacitance-voltage measurements”, Solid State Electronics, 69, 11-13 (2012) [32]. M. C. Wang, T. C. Chang*, S. W. Tsao, Y. Z. Chen, T. C. Hsu, D. J. Jan, C. F. Ai, and J. R. Chen, “Improvement of n+-doped-layer free amorphous silicon thin film solar cells fabricated with CuMg alloy as back contact metal”, Solid State Electronics, 72, 12-14 (2012) [33]. C. N. Chen, C. P. Chen, T. Y. Dong*, T. C. Chang, M. C. Chen, H. T. Chen, I. G. Chen, “Using nanoparticle as direct- injection printing ink to fabricate conductive silver features on the transparent flexible PET substrate at room-temperature”, Acta Materialia, 60, 5914-5924 (2012) -------------------------------- 2011年發表論文 共43篇 -------------------------------- [01] T. C. Chang*, F. Y. Jian, S. C. Chen, Y. T. Tsai, “Developments in nanocrystal memory”, Materials Today 14(12), 608 (2011) Invited review article [02] C. H. Dai, T. C. Chang*, Y. J. Kuo, A. K. Chu, W. H. Lo, S. H. Ho, C. E. Chen, J. M. Shih, H. M. Chen, B. S. Dai, G. Xia, O. Cheng, C. T. Huang, “Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors”, Appl. Phys. Lett. 98, 092112 (2011) [03] C. S. Lin, T. C. Chang*, Y. C. Chen, F. Y. Jian, H. W. Li, Y. C. Chen, T. C. Chen, and Y. H. Tai, “Anomalous On-Current and Subthreshold Swing Improvement in Low-Temperature Polycrystalline-Silicon Thin-Film Transistors under Gate Bias Stress”, Appl. Phys. Lett. 98, 122101 (2011) [04] W. F. Chung, T. C. Chang*, H. W. Li, S. C. Chen, Y. C. Chen, T. Y. Tseng, and Y. H. Tai, “Environment-Dependent Thermal Instability of Sol-gel derived Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors”, Appl. Phys. Lett. 98, 152109 (2011) [05] C. H. Dai, T. C. Chang*, A. K. Chu, Y. J. Kuo, S. H. Ho, T. Y. Hsieh, W. H. Lo, C. E. Chen, J. M. Shih, W. l. Chung, B. S. Dai, H. M. Chen, G. Xia, O. Cheng, C. T. Huang, “Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors”, Appl. Phys. Lett. 99, 012106 (2011) [06] T. C. Chen, T. C. Chang*, T. Y. Hsieh, W. S. Lu, F. Y. Jian, C. T. Tsai, S. Y. Huang, C. S. Lin, “Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor”, Appl. Phys. Lett. 99, 022104 (2011) [07] Y. T. Tsai, T. C. Chang*, W. L. Huang, C. W. Huang, Y. E. Syu, S. C. Chen, S. M. Sze, M. J. Tsai, and T. Y. Tseng, “Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices”, Appl. Phys. Lett. 99, 092106 (2011) [08] H. C. Tseng, T. C. Chang*, J. J. Huang, P. C. Yang, Y. T. Chen, F. Y. Jian, S. M. Sze, and M. J. Tsai, “Investigating the Improvement of Resistive Switching Trends after Post-Forming Negative Bias Stress Treatment”, Appl. Phys. Lett. 99, 132104 (2011) [09] K. C. Chang, T. M. Tsai, T. C. Chang*, Y. E. Syu, C. C. Wang, S. L. Chuang, C. H. Li, D. S. Gan, and S. M. Sze, “Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment”, Appl. Phys. Lett. 99, 263501 (2011) [10] Y. F. Chang, T. C. Chang*, and C. Y. Chang, “Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure,” J. Appl. Phys. 110, 053703 (2011) [11] P. C. Yang, T. C. Chang*, S. C. Chen, Y. S. Lin, H. C. Huang, and D. S. Gan, “Influence of bias-induced copper diffusion on the resistive switching characteristics of SiON thin film”, Electrochem. Solid State Lett., 14(2), H93-H95 (2011) [12] S. C. Chen, T. C. Chang*, S. Y. Chen , H. W. Li , Y. T. Tsai , C. W. Chen , S. M. Sze , F. S. Yeh(Huang), and Y. H. Tai, “Carrier transport and multi-level switching mechanism for Chromium Oxide resistive random-access memory”, Electrochem. Solid State Lett., 14(2), H103-H106 (2011) [13] Y. T. Tsai, T. C. Chang*, C. C. Lin, S. C. Chen, C. W. Chen, S. M. Sze, F. S. Yeh (Hung), and T. Y. Tseng, “Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices”, Electrochem. Solid State Lett., 14(3), H135-H138 (2011) [14] W. F. Chung , T. C. Chang*, H. W. Li , C. W. Chen , Y. C. Chen , S. C. Chen , T. Y. Tseng , and Y. H Tai, “Influence of H2O dipole on subthreshold swing of amorphous indium-gallium-zinc-oxide thin film transistors”, Electrochem. Solid State Lett., 14(3), H114-H116 (2011) [15] S. Y. Huang, T. C. Chang*, M. C. Chen, S. C. Chen, C. T. Tsai, M. C. Hung, C. H. Tu, C. H. Chen, J. J. Chang, and W. L. Liau, “Effects of ambient atmosphere on electrical characteristics of Al2O3 passivated InGaZnO thin film transistors during positive-bias-temperature-stress operation”, Electrochem. Solid State Lett., 14(4), H177-H179 (2011) [16] W. F. Chung, T. C. Chang*, H. W. Li, S. C. Chen, Y. C. Chen, T. Y. Tseng, Y. H. Tai, “H2O-assisted O2 adsorption in sol-gel derived amorphous indium gallium zinc oxide thin film transistors”, Electrochem. Solid State Lett., 14(6), H235-H237 (2011) [17] G. C. Chang, T. C. Chang*, T. M. Tsai, Y. E. Syu, H. C. Huang, Y. C. Hung, T. F. Young, D. S. Gan, N. J. Ho, “Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment”, Electrochem. Solid State Lett., 14(9), K47-K50 (2011) [18] Y. E. Syu, T. C. Chang*, C. T. Tsai, G. W. Chang, T. M. Tsai, K. C. Chang, Y. H. Tai, M. J. Tsai, and S. M. Sze, “Improving resistance switching characteristics with SiGeOx/SiGeON double layer for nonvolatile memory applications”, Electrochem. Solid State Lett., 14(10), H419-H421 (2011) [19] M. C. Chen, T. C. Chang*, S. Y. Huang, G. C. Chang, S. C. Chen, H. C. Huang, C. W. Hu, S. M. Sze, T. M. Tsai, D. S. Gan, F. S. Yeh(Huang), and M. J. Tsai, “Influence of oxygen partial pressure on resistance random access memory characteristics of indium gallium zinc oxide”, Electrochem. Solid State Lett., 14(12), H475-H477 (2011) [20] C. S. Lin, Y. C. Chen, T. C. Chang*, H. W. Li, S. C. Chen, W. C. Hsu, F. Y. Jian, T. C. Chen, and Y. H. Tai, “Transient effect assisted NBTI degradation in p-channel LTPS TFTs under dynamic stress”, J. Electrochem. Soc., 158 (1), H10-H14 (2011) [21] C. S. Lin, Y. C. Chen, T. C. Chang*, F. Y. Jian, H. W. Li, S. C. Chen, Y. S. Chuang, T. C. Chen, Y. H. Tai, M. H. Lee, and J. S. Chen, “Charge Trapping Induced Parasitic Capacitance and Resistance in SONOS TFTs under Gate Bias Stress”, IEEE Electron Device Lett., 32(3), 321-323 (2011) [22] Y. E. Syu, T. C. Chang*, T. M. Tsai, Y. C. Hung, K. C. Chang, M. J. Tsai, M. J. Kao, and S. M. Sze, “Redox Reaction Switching Mechanism in RRAM device with Pt/CoSiOX/TiN structure”, IEEE Electron Device Lett., 32(4), 545-547 (2011) [23] C. H. Dai, T. C. Chang*, A. K. Chu, Y. J. Kuo, F. Y. Jian, W. H. Lo, S. H. Ho, C. E. Chen, W. L. Chung, J. M. Shih, G. Xia, O. Cheng, and C. T. Huang, “On the Origin of Gate-Induced Floating Body Effect in PD SOI p-MOSFETs”, IEEE Electron Device Lett., 32(7), 847-849 (2011) [24] C. S. Lin, Y. C. Chen, T. C. Chang*, F. Y. Jian , W. C. Hsu, Y. J. Kuo, C. H. Dai, T. C. Chen, W. H. Lo , T. Y. Hsieh, and J. M. Shih, “NBTI Degradation in LTPS TFTs under Mechanical Tensile Strain”, IEEE Electron Device Lett., 32(7), 907-909 (2011) [25] G. W. Chang, T. C. Chang*, Y. E. Syu, Y. H. Tai, and F. Y. Jian, “On-Current Decrease after Erasing Operation in the Nonvolatile Memory Device with LDD Structure”, IEEE Electron Device Lett., 32( , 1038-1040 (2011) [26] H. W. Li, T. C. Chang*, G. W. Chang, C. S. Lin, T. M. Tsai, F. Y. Jian, Y. H. Tai, and M. H. Lee, “Effect of Lateral Body Terminal on Silicon-Oxide-Nitride-Oxide-Silicon Thin Film Transistors”, IEEE Electron Device Lett., 32(10), 1394-1396 (2011) [27] C. W. Hu, T. C. Chang*, C. H. Tu, Y. D. Chen, C. C. Lin, M. C. Chen, J. Y. Lin, S. M. Sze and T. Y. Tseng, “Nitric acid oxidized ZrO2 as the tunneling oxide of cobalt-silicide nanocrystals memory devices”, IEEE Trans. Nanotechnol. 10 (5), 1031-1035 (2011). [28] Y. F. Chang, L. W. Feng, T. C. Chang*, “Mechanism and characterizations studies of resistive switching effects on a thin FeOx-transition layer of the Ti/TiN/SiO2/FeOx/FePt structure by thermal annealing treatments”, Mater. Chem. Phys., 131, 262-267 (2011) [29] S. C. Chen, T. C. Chang*, W. R. Chen, Y. C. Lo, K. T. Wu, S. M. Sze, J. Chen, I. H. Liao, and F. S. Yeh(Huang), “Influence of hydrogen plasma treatment on charge storage characteristics in high density tungsten nanocrystal nonvolatile memory”, Thin Solid Films, 519, 3897-3901 (2011) [30] L. W. Feng, C. Y. Chang, T. C. Chang*, C. H. Tu, P. S. Wang, C. C. Lin, M. C. Chen, H. C. Huang, D. S. Gan, N. J. Ho, S. C. Chen, S. C. Chen, “Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications”, Thin Solid Films, 519, 7977-7981 (2011) [31] L. W. Feng, C. Y. Chang*, T. C. Chang*, C. H. Tu, P. S. Wang, C. C. Lin, M. C. Chen, H. C. Huang, D. S. Gan, N. J. Ho, S. C. Chen, and S. C. Chen, “Low temperature synthesis and electrical characterization of Germanium doped Ti-based nanocrystals for nonvolatile memory”, Thin Solid Films, 520, 1136-1140 (2011) [32] T. C. Chen, T. C. Chang*, T. Y. Hsieh, C. T. Tsai, S. C. Chen, C. S. Lin, F. Y. Jian, M. Y. Tsai, “Investigation of the Gate-Bias Induced Instability for InGaZnO TFTs under Dark and Light Illumination”, Thin Solid Films, 520, 1422-1426 (2011) [33] T. Y. Hsieh, T. C. Chang*, T. C. Chen, M. Y. Tsai, W. H. Lu, S. C. Chen, F. Y. Jian, C. S. Lin, “Effect of N2O plasma treatment on the improvement of instability under light illumination for InGaZnO thin-film transistors”, Thin Solid Films, 520, 1427-1431 (2011) [34] Y. C. Chen, T. C. Chang*, H. W. Li, S. C. Chen, W. F. Chung, Y. H. Chen, Y. H. Tai, T. Y. Tseng, and F. S. Yeh(Huang), “Surface states related the bias stability of amorphous In-Ga-Zn-O thin film transistors under different ambient gases”, Thin Solid Films, 520, 1432-1436 (2011) [35] C. H. Dai, T. C. Chang*, A. K. Chu, Y. J. Kuo, Y. C. Hung, W. H. Lo, S. H. Ho, C. E. Chen, J. M. Shih, W. L. Chung, H. M. Chen, B. S. Dai, T. M. Tsai, G. Xia, O. Cheng, and C. T. Huang, “Charge Trapping Induced Frequency-Dependence Degradation in n-MOSFETs with High-k/Metal Gate Stacks”, Thin Solid Films, 520, 1511-1515 (2011) [36] G. W. Chang, T. C. Chang*, Y. E. Syu, T. M. Tsai, K. C. Chang, C. H. Tu, F. Y. Jian, Y. C. Hung, and Y. H. Tai, “Paraffin Wax Passivation Layer Improvements in Electrical Characteristics of Bottom Gate Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors”, Thin Solid Films, 520, 1608-1611 (2011) [37] H. C. Tseng, T. C. Chang*, J. J. Huang, Y. T. Chen, P. C. Yang, H. C. Huang, D. S. Gan, N. J. Ho, S. M. Sze, and M. J. Tsai, “Resistive Switching Characteristics of Ytterbium Oxide Thin Film for Nonvolatile Memory Application”, Thin Solid Films, 520, 1656-1659 (2011) [37] Y. F. Chang, L. W. Feng, T. C. Chang, “Mechanism and characterizations studies of resistive switching effects on a thin FeOx-transition layer of the Ti/TiN/SiO2/FeOx/FePt structure by thermal annealing treatments”, Mater. Chem. Phys., 131, 262-267 (2011) [38] M. C. Wang, T. C. Chang*, S. W. Tsao, Y. Z. Chen, S. C. Tseng, T. C. Hsu, D. J. Jan, C. F. Ai, and J. R. Chen, “n+-doped-layer free amorphous silicon thin film solar cells fabricated with the CuMg alloy as back contact metal”, Solid State Electronics, 57, 73-75 (2011) [39] S. Y. Huang, T. C. Chang*, M. C. Chen, S. W. Tsao, S. C. Chen, C. T. Tsai, and H. P. Lo, “Device Characteristics of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors with Ammonia Incorporation”, Solid State Electronics, 61, 96-99 (2011) [40] S. C. Chen, T. C. Chang*, S. Y. Chen, C. W. Chen, S. C. Chen, S. M. Sze, M. J. Tsai, M. J. Kao, and F. S. Yeh(Huang), “Bipolar resistive switching of Chromium Oxide for Resistive Random Access Memory”, Solid State Electronics, 62, 40-43 (2011) [41] P. C. Yang, T. C. Chang*, S. C. Chen, H. H. Su, J. Lu, H. C. Huang, D. S. Gan, and N. J. Ho, “Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment”, Solid State Electronics, 62, 128-131 (2011) [42] S. W. Tsao, T. C. Chang*, M. C. Wang, S. C. Chen, J. Lu, C. F. Weng, Y. F. Wei, W. C. Wu, and Y. Shi, “Influence of mechanical bending and temperature on the threshold voltage instability of a-Si:H thin-film transistors under electrical stress”, Solid State Electronics, 63, 55-59 (2011) [43] S. Y. Huang, T. C. Chang*, M. C. Chen, S. C. Chen, H. P. Lo, H. C. Huang, D. S. Gan, S. M. Sze, and M. J. Tsai, “Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications”, Solid State Electronics, 63, 189-191 (2011) -------------------------------- 2010年發表論文 共32篇 -------------------------------- [01] L. W. Feng, C. Y. Chang*, Y. F. Chang, W. R. Chen, S. Y. Wang, P. W. Chiang and T. C. Chang*, “A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures,” Appl. Phys. Lett. 96, 052111 (2010). [02] L. W. Feng, C. Y. Chang*, Y. F. Chang, T. C. Chang*, S. Y. Wang, S. C. Chen, C. C. Lin, S. C. Chen, and P. W. Chiang, “Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing”, Appl. Phys. Lett. 96, 222108 (2010) [03] C. T. Tsai, T. C. Chang*, S. C. Chen, I. Lo, S. W. Tsao, M.C. Hung, J. J. Chang, C. Y. Wu, and C. Y. Huang, “Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor”, Appl. Phys. Lett. 96, 242105 (2010) [04] M. C. Chen, T. C. Chang*, C. T. Tsai, S. Y. Huang, S. C. Chen, C. W. Hu, S. M. Sze, and M. J. Tsai, “Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films”, Appl. Phys. Lett. 96, 262110 (2010) [05] Y. C. Chen, T. C. Chang*, H. W. Li, S. C. Chen, J. Lu, W. F. Chung, Y. H. Tai, and T. Y. Tseng, “Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress”, Appl. Phys. Lett. 96, 262104 (2010) [06] J. Lu, T. C. Chang*, Y. T. Chen, J. J. Huang, P. C. Yang, S. C. Chen, H. C. Huang, D. S. Gan, N. J. Ho, Y. Shi, and A. K. Chu, “Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory”, Appl. Phys. Lett. 96, 262107 (2010) [07] T. C. Chen, T. C. Chang*, C. T. Tsai, T. Y. Hsieh, S. C. Chen, C. S. Lin, M. C. Hung, C. H. Tu, J. J. Chang, and P. L. Chen, “Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress”, Appl. Phys. Lett. 97, 112104 (2010) [08] T. C. Chen, T. C. Chang*, T. Y. Hsieh, C. T. Tsai, S. C. Chen, C. S. Lin, M. C. Hung, C. H. Tu, J. J. Chang, and P. L. Chen, “Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition”, Appl. Phys. Lett. 97, 192103 (2010) [09] S. Y. Wang, C. W. Huang, D. Y. Lee, T. Y. Tseng*, and T. C. Chang, “Multilevel resistive switching in Ti/CuxO/Pt memory devices”, J. Appl. Phys. 108, 114110(2010). [10] C. W. Hu, T. C. Chang*, C. H. Tu, Y. H. Huang, C. C. Lin, M. C. Chen, F. S. Huang, S. M. Sze, and T. Y. Tseng, " High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application," Electrochem. Solid State Lett., 13 (3), H49-H51 (2010). [11] F. Y. Jian, T. C. Chang*, A. K. Chu, T. C. Chen, S. C. Chen, C. S. Lin, H. W Li, M. H. Lee, J. S. Chen, and C. C. Shih, “Unusual threshold voltage shift caused by self-heating-induced charge trapping effect,” Electrochem. Solid State Lett., 13 (4), H95-H97 (2010) [12] F. Y. Jian, T. C. Chang*, A. K. Chu, S. C. Chen, T. C. Chen, Y. E. Hsu, H. C. Tseng, C. S. Lin, T. F. Young, and Y. L. Yang, “A two-bit nonvolatile memory device with a transistor switch function accomplished with edge-FN tunneling operation,” Electrochem. Solid State Lett.,13(5), H166-168 (2010) [13] M. C. Chen, T. C. Chang*, S. Y. Huang, S. C. Chen, C. W. Hu, C. T. Tsai, and Simon M. Sze, “Bipolar resistive switching characteristics of transparent indium gallium zinc oxide resistive random access memory”, Electrochem. Solid State Lett., 13(6), H191-H193 (2010) [14] C. S. Lin, Y. C. Chen, T. C. Chang*, H. W. Li, W. C. Hsu, S. C. Chen, Y. H. Tai, F. Y. Jian, T. C. Chen, K. J. Tu, H. H. Wu and Y. C. Chen, “Degradation of Low Temperature Polycrystalline Silicon Thin Film Transistors under Negative Bias Temperature Instability Stress with Illumination Effect,” J. Electrochem. Soc., 157 (2), J29-J33 (2010) [15] C. F. Weng, T. C. Chang*, F. Y. Jian, S. C. Chen, J. Lu , I C. Lu, T. F. Young, “Asymmetric negative bias temperature instability degradation of poly-Si TFTs under static stress,” J. Electrochem. Soc. 157 (1), H22-H26 (2010). [16] C. W. Hu, T. C. Chang*, C. H. Tu, Y. D. Chen, C. C. Lin, M. C. Chen, J. Y. Lin, S. M. Sze, and T. Y. Tseng, “Nitric acid oxidation of Si for the tunneling oxide application on CoSi2 nanocrystals nonvolatile memory”, J. Electrochem. Soc., 157 (3), H332-H336 (2010) [17] C. S. Lin, Y. C. Chen, T. C. Chang*, H. W. Li, S. C. Chen, F. Y. Jian, Y. S. Chuang, T. C. Chen, Y. C. Chen, and Y. H. Tai, “Analysis of Anomalous Capacitance Induced by TAGIDL in p-Channel LTPS TFTs”, J. Electrochem. Soc., 157 (11), H1003-H1007 (2010) [18] C. H. Dai, T. C. Chang*, Y. J. Kuo, S. C. Chen , C. C. Tsai, S. H. Ho, W. H. Lo, G. Xia, O. Cheng, and C. T. Huang, “On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs”, IEEE Electron Device Lett., 31(6), 540-542 (2010) [19] T. C. Chen, T. C. Chang*, S. C. Chen, T. Y. Hsieh, F. Y. Jian, C. S. Lin, H. W. Li, M. H. Lee, J. S. Chen, and C. C. Shih, “Analysis of degradation mechanism in SONOS-TFT under hot-carrier operation”, IEEE Electron Device Lett., 31(12), 1413-1415 (2010) [20] C. C. Lin, T. C. Chang*, C. H. Tu, S. C. Chen, C. W. Hu, S. M. Sze, T. Y. Tseng, S. C. Chen, and J. Y. Lin, " Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride," J. Phys. D: Appl. Lett., 43, 075106 (2010). [21] K. H. Chen*, T. C. Chang, G. C. Chang, Y. E. Hsu, Y. C. Chen, and H. Q. Xu, "Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O-3 thin films deposited on indium tin oxide/glass substrates," Appl. Phys. A-Mater. Sci. Process. 99 (1), 291-295 (2010). [22] S. C. Chen, T. C. Chang*, Y. C. Wu, J. Y. Chin, Y. E. Syu, S. M. Sze, and C. Y. Chang, “Temperature-dependent memory characteristics of SONOS-TFTs”, Thin Solid Films, 518, 3999-4002 (2010) [23] C. W. Hu, T. C. Chang*, C. H. Tu, C. N Chiang, C. C. Lin, M. C. Chen, C. Y. Chang, Simon M. Sze, and T. Y. Tseng, “Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N2 and O2 ambient”, Thin Solid Films, 518, 7304-7307 (2010) [24] S. C. Chen, T. C. Chang*, W. R. Chen, Y. C. Lo, K. T. Wu, S. M. Sze, Jason Chen, I. H. Liao, and F. S. Yeh(Huang), “Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments”, Thin Solid Films, 518, 7339-7342 (2010) [25] Y. T. Chen, T. C. Chang*, J. Lu, J. J. Huang, P. C. Yang, S. C. Chen, A. K. Chu, H. C. Huang, D. S. Gan, N. J. Ho, and Y. Shi, “Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application”, Thin Solid Films, 518, 7324-7327 (2010) [26] S. C. Chen, T. C. Chang*, C. M. Hsieh, H. W. Li, S. M. Sze, W. P. Nien, C. W. Chan, F. S. Yeh(Huang), and Y. H. Tai, “Formation and Nonvolatile memory characteristics of W nanocrystals by In-Situ Steam Generation Oxidation”, Thin Solid Films, 519, 1677-1680 (2010) [27] L. W. Feng, Y. F. Chang, C. Y. Chang*, T. C. Chang*, S. Y. Wang, P. W. Chiang, C. C. Lin, S. C. Chen, and S. C. Chen, “Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure”, Thin Solid Films, 519, 1536-1539 (2010) [28] S. W. Tsao, T. C. Chang*, P. C. Yang, S. C. Chen, J. Lu, M. C. Wang, C. M. Huang, W. C. Wu, W. C. Kuo, and Y. Shi, “Temperature influence on Photo-leakage-current Characteristics of a-Si:H thin-film transistor,” Solid-State Electronics, 54, 642-645 (2010). [29] S. W. Tsao, T. C. Chang*, P. C. Yang, M. C. Wang, S. C. Chen, J. Lu, T. S. Chang, W. C. Kuo, W. C. Wu, and Y. Shi, “Low temperature characteristics of a-Si:H Thin Film Transistor under Mechanical Strain”, Solid State Electronics, 54, 1632-1636 (2010) [30] S. W. Tsao, T. C. Chang*, S. Y. Huang, M. C. Chen, S. C. Chen, C. C. Tsai,Y. J. Kuo, Y. C. Chen, W. C. Wu, ”Hydrogen-induced improvements in electrical characteristics of a-IGZO Thin Film Transistors”, Solid State Electronics,54, 1497-1499 (2010) [31] M. C. Wang, S. W. Tsao, T. C. Chang*, Y. P. Lin, P. T. Liu, and J. R. Chen, “Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors”, Solid State Electronics, 54, 1485-1487 (2010) [32] C. H. Dai, T. C. Chang*, A. K. Chu, Y. J. Kuo, S. C. Chen, C. T. Tsai, W. H. Lo, S. H. Ho, G. Xia, O. Cheng, and C. T. Huang, “Enhanced Gate-Induced Floating Body Effect in PD SOI n-MOSFETs under External Mechanical Strain”, Surface & Coatings Technology 205, 1470–1474 (2010) -------------------------------- 2009年發表論文 共18篇 -------------------------------- [01] C. C. Lin, T. C. Chang*, C. H. Tu, W. R. Chen, C. W. Hu, S. M. Sze, T. Y. Tseng, S. C. Chen, and J. Y. Lin, "Improved reliability of Mo nanocrystal memory with ammonia plasma treatment," Appl. Phys. Lett. 94 (6), 062106 (2009). [02] C. W. Hu, T. C. Chang*, C. H. Tu, C. N. Chiang, C. C. Lin, S. M. Sze, and T. Y. Tseng, "NiSiGe nanocrystals for nonvolatile memory devices," Appl. Phys. Lett. 94 (6), 062102 (2009). [03] C. W. Hu, T. C. Chang*, C. H. Tu, P. K. Shueh, C. C. Lin, S. M. Sze, T. Y. Tseng, and M. C. Chen, "Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory," Appl. Phys. Lett. 94 (10), 102106 (2009). [04] M. C. Chen, T. C. Chang*, S. Y. Huang, K. C. Chang, H. W. Li, S. C. Chen, J. Lu, and Y. Shi, “A low-temperature method for improving the performance of sputter-deposited ZnO thin-film-transistors with supercritical fluid,” Appl. Phys. Lett. 94, p. 162111 (2009). [05] L. W. Feng, C. Y. Chang*, T. C. Chang*, C. H. Tu, P. S. Wang, Y. F. Chang, M. C. Chen, and H. C. Huang, “Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications”, Appl. Phys. Lett. 95, 262110 (2009). [06] C. T. Tsai, T. C. Chang*, P. T. Liu, Y. L. Cheng, K. T. Kin, and F. S. Huang, "Application of Supercritical CO2 Fluid for Dielectric Improvement of SiOx Film," Electrochem. Solid State Lett. 12 (2), H35-H37 (2009). [07] C. S. Lin, Y. C. Chen, T. C. Chang*, W. C. Hsu, S. C. Chen, H. W. Li, K. J. Tu, F. Y. Jian, and T. C. Chen, "Illumination-Assisted Negative Bias Temperature Instability Degradation in Low Temperature Polycrystalline Silicon Thin-Film Transistors," Electrochem. Solid State Lett. 12 (6), H229-H232 (2009). [08] Y. J. Kuo, T. C. Chang*, C. H. Dai, S. C. Chen, J. Lu, S. H. Ho, C. H. Chao, T. F. Young, O. Cheng, and C. T. Huang, "Temperature-Dependent Biaxial Compressive Strain Effect on p-MOSFETs," Electrochem. Solid State Lett. 12 (2), H32-H34 (2009). [09] C. C. Lin, T. C. Chang*, C. H. Tu, W. R. Chen, L. W. Feng, S. M. Sze, T. Y. Tseng, S. C. Chen, and J. Y. Lin, "Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure," J. Electrochem. Soc. 156 (4), H276-H280 (2009). [10] C. W. Hu, T. C. Chang*, C. H. Tu, C. N. Chiang, C. C. Lin, S. W. Lee, C. Y. Chang, S. M. Sze, and T. Y. Tseng, “Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices”, J. Electrochem. Soc., 156 (9), H751-H755(2009) [11] C. C. Lin, T. C. Chang*, C. H. Tu, W. R. Chen, C. W. Hu, S. M. Sze, T. Y. Tseng, S. C. Chen, and J. Y. Lin, “Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment,” J. Electrochem. Soc., 156 (9), H716-H719(2009) [12] T. C. Chen, T. C. Chang*, F. Y. Jian, S. C. Chen, C. S. Lin, M. H. Lee, J. S. Chen, C. C. Shih, “Improvement of Memory State Misidentification Caused by Trap-Assisted GIDL Current in a SONOS-TFT Memory Device,” IEEE Electron Device Lett., 30 ( , 834-836(2009) [13] C. S. Lin, Y. C. Chen, T. C. Chang*, S. C. Chen, F. Y. Jian, H. W. Li, T. C. Chen, C. F. Weng, J. Lu, and W. C. Hsu, " Anomalous capacitance induced by GIDL in P-channel LTPS TFTs", IEEE Electron Device Lett. 30 (11), 1179-1181 (2009) [14] W. R. Chen, T. C. Chang*, Y. T. Hsieh, and C. Y. Chang, "Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using _________________ 張航 愛好藝文、小說、新詩、童詩、兒歌、詞曲、散文、論文、民俗文藝.......等並頻頻獲獎. 歡迎蒞臨張航文選---隨意窩 http://blog.xuite.net/changhangming1234/twblog 来源：http://www.australianwinner.com/AuWinner/viewtopic.php?t=665339 |
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